Littelfuse Type N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-263 IXFA36N60X3
- RS-stocknr.:
- 245-6996
- Fabrikantnummer:
- IXFA36N60X3
- Fabrikant:
- Littelfuse
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,98
(excl. BTW)
€ 6,03
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,98 |
| 10 - 24 | € 4,49 |
| 25 - 49 | € 4,40 |
| 50 - 99 | € 4,27 |
| 100 + | € 3,71 |
*prijsindicatie
- RS-stocknr.:
- 245-6996
- Fabrikantnummer:
- IXFA36N60X3
- Fabrikant:
- Littelfuse
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Littelfuse | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 446W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Littelfuse | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 446W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO263 package. These Power MOSFETs feature significantly reduced channel resistance RDSon and gate charge Qg. They feature the lowest figures of merit RDS Qg and RthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFETseries of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
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