DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin SOIC

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€ 610,00

(excl. BTW)

€ 737,50

(incl. BTW)

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  • Verzending vanaf 28 december 2026
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2500 +€ 0,244€ 610,00

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RS-stocknr.:
246-6889
Fabrikantnummer:
DMT68M8LSS-13
Fabrikant:
DiodesZetex
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Merk

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

12V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.73W

Maximum Operating Temperature

175°C

Height

1.45mm

Standards/Approvals

No

Length

4.9mm

Width

3.85 mm

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 60 V Maximum gate to source voltage is ±20 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate

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