DiodesZetex Quad 4 Type P, Type N-Channel MOSFET, 100 V Enhancement, 8-Pin SOT-223 ZXMHC10A07T8TA
- RS-stocknr.:
- 246-7626
- Fabrikantnummer:
- ZXMHC10A07T8TA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,02
(excl. BTW)
€ 10,915
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,804 | € 9,02 |
| 50 - 95 | € 1,528 | € 7,64 |
| 100 - 245 | € 1,308 | € 6,54 |
| 250 - 495 | € 1,286 | € 6,43 |
| 500 + | € 1,24 | € 6,20 |
*prijsindicatie
- RS-stocknr.:
- 246-7626
- Fabrikantnummer:
- ZXMHC10A07T8TA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | 0.95V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 10.4W | |
| Transistor Configuration | Quad | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf 0.95V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 10.4W | ||
Transistor Configuration Quad | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SM-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
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