ROHM R6515KNX3 Type N-Channel MOSFET, 10.7 A, 650 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
249-1119
Fabrikantnummer:
R6515KNX3C16
Fabrikant:
ROHM
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Merk

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

R6515KNX3

Pin Count

3

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

27.5nC

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free Plating, RoHS

Automotive Standard

No

The ROHM high-speed switching N channel 650 V, 15 A drain current power MOSFET are high-speed switching products, super junction MOSFETs, that place an emphasis on high efficiency, this series products achieve higher efficiency via high-speed switching, h

Low on-resistance

Ultra fast switching

Parallel use is easy

Pb-free plating

RoHS compliant

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