ROHM RCJ451N20 N-Channel MOSFET, 10.7 A, 200 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 249-1134P
- Fabrikantnummer:
- RCJ451N20TL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
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€ 157,75
(excl. BTW)
€ 190,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 56 stuk(s) vanaf 12 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 50 - 98 | € 3,155 |
| 100 - 248 | € 2,995 |
| 250 - 498 | € 2,935 |
| 500 + | € 2,58 |
*prijsindicatie
- RS-stocknr.:
- 249-1134P
- Fabrikantnummer:
- RCJ451N20TL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | RCJ451N20 | |
| Package Type | TO-263 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series RCJ451N20 | ||
Package Type TO-263 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHs compliant
100 percent avalanche tested
Drive circuits can be simple