STMicroelectronics STD Type N-Channel MOSFET, 80 A, 35 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 249-6744
- Fabrikantnummer:
- STD80N240K6
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 2500 eenheden)*
€ 7.252,50
(excl. BTW)
€ 8.775,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 31 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 2,901 | € 7.252,50 |
*prijsindicatie
- RS-stocknr.:
- 249-6744
- Fabrikantnummer:
- STD80N240K6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Series | STD | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Standards/Approvals | UL | |
| Width | 6.6 mm | |
| Length | 10.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 35V | ||
Series STD | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Standards/Approvals UL | ||
Width 6.6 mm | ||
Length 10.1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics is very high voltage N-channel Power MOSFET is designed using the ultimate mesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
Gerelateerde Links
- STMicroelectronics N-Channel MOSFET 800 V, 3-Pin DPAK STD80N240K6
- STMicroelectronics Silicon N-Channel MOSFET 800 V, 3-Pin DPAK-3 STD80N340K6
- STMicroelectronics SuperMESH Silicon N-Channel MOSFET 800 V, 3-Pin DPAK STD4NK80ZT4
- STMicroelectronics SuperMESH Silicon N-Channel MOSFET 800 V, 3-Pin DPAK STD1NK80ZT4
- STMicroelectronics STripFET N-Channel MOSFET 60 V, 3-Pin DPAK STD16NF06T4
- STMicroelectronics N-Channel MOSFET 800 V, 3-Pin TO-220 STP80N240K6
- STMicroelectronics STF N-Channel MOSFET 800 V, 3-Pin TO-220FP STF80N240K6
- STMicroelectronics N-Channel MOSFET 3-Pin DPAK STD13N60DM2