Infineon AUIRFS Type N-Channel MOSFET, 42 A, 75 V, 3-Pin TO-263 AUIRFR2407TRL
- RS-stocknr.:
- 249-6874
- Fabrikantnummer:
- AUIRFR2407TRL
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 2,84
(excl. BTW)
€ 3,44
(incl. BTW)
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- Plus verzending 167 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,84 |
| 10 - 49 | € 2,71 |
| 50 - 99 | € 2,60 |
| 100 - 249 | € 2,46 |
| 250 + | € 2,33 |
*prijsindicatie
- RS-stocknr.:
- 249-6874
- Fabrikantnummer:
- AUIRFR2407TRL
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | AUIRFS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series AUIRFS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
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