Infineon AUIRFS Type N-Channel MOSFET, 72 A, 20 V, 3-Pin TO-263 AUIRFS4127TRL
- RS-stocknr.:
- 249-6876
- Fabrikantnummer:
- AUIRFS4127TRL
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,30
(excl. BTW)
€ 7,62
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 20 april 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,30 |
| 10 - 24 | € 5,99 |
| 25 - 49 | € 5,74 |
| 50 - 99 | € 5,48 |
| 100 + | € 5,11 |
*prijsindicatie
- RS-stocknr.:
- 249-6876
- Fabrikantnummer:
- AUIRFS4127TRL
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-263 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-263 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
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