Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- RS-stocknr.:
- 249-6894
- Fabrikantnummer:
- IAUC60N04S6N050HATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,55
(excl. BTW)
€ 7,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,31 | € 6,55 |
| 50 - 120 | € 1,126 | € 5,63 |
| 125 - 245 | € 1,048 | € 5,24 |
| 250 - 495 | € 0,984 | € 4,92 |
| 500 + | € 0,902 | € 4,51 |
*prijsindicatie
- RS-stocknr.:
- 249-6894
- Fabrikantnummer:
- IAUC60N04S6N050HATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC60N04S6N050H | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 52W | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC60N04S6N050H | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 52W | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
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