Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor, 45 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- RS-stocknr.:
- 249-6887
- Fabrikantnummer:
- IAUC45N04S6N070HATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,42
(excl. BTW)
€ 7,77
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 4.505 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,284 | € 6,42 |
| 50 - 120 | € 1,144 | € 5,72 |
| 125 - 245 | € 1,066 | € 5,33 |
| 250 - 495 | € 1,00 | € 5,00 |
| 500 + | € 0,924 | € 4,62 |
*prijsindicatie
- RS-stocknr.:
- 249-6887
- Fabrikantnummer:
- IAUC45N04S6N070HATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOSTM | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOSTM | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
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