Infineon BSD235C 2 Type N, Type P-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SOT-363 BSD235CH6327XTSA1

RS-stocknr.:: 250-0523
Fabrikantnummer:: BSD235CH6327XTSA1
Fabrikant:: Infineon

Infineon BSD235C 2 Type N, Type P-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SOT-363 BSD235CH6327XTSA1

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RS-stocknr.:: 250-0523
Fabrikantnummer:: BSD235CH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	950mA
	Maximum Drain Source Voltage Vds	20V
	Series	BSD235C
	Package Type	SOT-363
	Mount Type	Surface Mount
	Pin Count	6
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	0.5W
	Maximum Gate Source Voltage Vgs	1.20V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 950mA
	Maximum Drain Source Voltage Vds 20V
	Series BSD235C
	Package Type SOT-363
	Mount Type Surface Mount
	Pin Count 6
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 0.5W
	Maximum Gate Source Voltage Vgs 1.20V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - BSD235CH6327XTSA1

Infineon BSD235C Series MOSFET, 20V Maximum Drain-Source Voltage, 0.95A Maximum Continuous Drain Current - BSD235CH6327XTSA1

This MOSFET is a dual enhancement‑mode transistor designed for compact, automotive‑grade applications. It integrates both N‑channel and P‑channel elements on a single chip within a 6‑pin SOT‑363 package, enabling small‑footprint switching and signal tasks. The device is specified to operate across a wide temperature span appropriate for demanding environments and conforms to environmental material restrictions.

Features and Benefits:

• 20V maximum drain source voltage enables low‑voltage switching capability
• 0.95A continuous drain current supports moderate current loads
• 1.2V gate‑source rating allows low‑voltage gate drive operation
• 0.5W power dissipation permits Compact thermal budgeting
• 150°C maximum operating temperature allows elevated ambient use

Applications

• Suitable for automotive load switching in restricted spaces
• Ideal for complementary push‑pull signal stages
• Used with low‑voltage control logic for gate driving
• Can be used for redundant dual‑element power management
• Used for Compact board designs requiring RoHS compliance

How many transistor elements are integrated on the chip?

It contains two elements, one N‑channel and one P‑channel.

What pin count and package should I plan for in PCB layout?

The device uses a 6‑pin SOT‑363 footprint for surface mounting.

What temperature extremes can it withstand during operation?

The permitted operating range extends from -55°C up to 150°C.

Is the device suitable where material restrictions apply?

It meets RoHS material requirements and is designed accordingly.