Infineon BSS Type P-Channel MOSFET, 0.23 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1
- RS-stocknr.:
- 250-0556
- Artikelnummer Distrelec:
- 304-40-501
- Fabrikantnummer:
- BSS306NH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 1,48
(excl. BTW)
€ 1,79
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 16.920 stuk(s) vanaf 13 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,148 | € 1,48 |
| 100 - 240 | € 0,14 | € 1,40 |
| 250 - 490 | € 0,134 | € 1,34 |
| 500 - 990 | € 0,128 | € 1,28 |
| 1000 + | € 0,103 | € 1,03 |
*prijsindicatie
- RS-stocknr.:
- 250-0556
- Artikelnummer Distrelec:
- 304-40-501
- Fabrikantnummer:
- BSS306NH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.23A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.23A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes N-channel Enhancement mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS 2, Small-Signal-Transistor. The logic level (4.5V rated) and Avalanche rated. It is 100% lead-free and Halogen free.
N-channel, Enhancement mode
Logic level 4.5V rated
Maximum power dissipation is 500mW
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