Vishay Type N-Channel MOSFET, 153 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3

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€ 15,02

(excl. BTW)

€ 18,175

(incl. BTW)

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50 - 120€ 2,822€ 14,11
125 - 245€ 2,554€ 12,77
250 - 495€ 2,402€ 12,01
500 +€ 2,254€ 11,27

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Verpakkingsopties
RS-stocknr.:
252-0260
Fabrikantnummer:
SIDR5802EP-T1-RE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

153A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0042mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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