Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8

Subtotaal (1 rol van 3000 eenheden)*

€ 1.038,00

(excl. BTW)

€ 1.257,00

(incl. BTW)

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Per rol*
3000 +€ 0,346€ 1.038,00

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RS-stocknr.:
252-0270
Fabrikantnummer:
SIR1309DP-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

65.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

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