Vishay TrenchFET Type P-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SI7149ADP-T1-GE3
- RS-stocknr.:
- 818-1393
- Fabrikantnummer:
- SI7149ADP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 14,34
(excl. BTW)
€ 17,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,717 | € 14,34 |
| 200 - 480 | € 0,681 | € 13,62 |
| 500 - 980 | € 0,573 | € 11,46 |
| 1000 - 1980 | € 0,538 | € 10,76 |
| 2000 + | € 0,502 | € 10,04 |
*prijsindicatie
- RS-stocknr.:
- 818-1393
- Fabrikantnummer:
- SI7149ADP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0052Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.74V | |
| Typical Gate Charge Qg @ Vgs | 43.1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.99mm | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0052Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.74V | ||
Typical Gate Charge Qg @ Vgs 43.1nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.99mm | ||
Width 5 mm | ||
Height 1.07mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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