Vishay Type N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- RS-stocknr.:
- 252-0312
- Fabrikantnummer:
- SQJQ184E-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,71
(excl. BTW)
€ 9,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 692 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,855 | € 7,71 |
| 20 - 48 | € 3,63 | € 7,26 |
| 50 - 98 | € 3,275 | € 6,55 |
| 100 - 198 | € 3,085 | € 6,17 |
| 200 + | € 2,90 | € 5,80 |
*prijsindicatie
- RS-stocknr.:
- 252-0312
- Fabrikantnummer:
- SQJQ184E-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 430A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK (8x8LR) | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0014mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 430A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK (8x8LR) | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0014mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
Gerelateerde Links
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ118ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ160ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ570ER-T1_GE3
- Vishay SQJQ186ER Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ186ER-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ141ELR-T1_GE3