Vishay TrenchFET Gen IV Type N-Channel MOSFET, 245 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L)

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RS-stocknr.:
252-0315
Fabrikantnummer:
SQJQ186E-T1_GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

245A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

214W

Maximum Operating Temperature

175°C

Width

4.9 mm

Standards/Approvals

AEC-Q101

Length

6.15mm

Height

1.9mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

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