ROHM RH6P040BH Type N-Channel MOSFET, 40 A, 100 V Enhancement HSMT-8 RH6P040BHTB1
- RS-stocknr.:
- 252-3155
- Fabrikantnummer:
- RH6P040BHTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 14,58
(excl. BTW)
€ 17,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,458 | € 14,58 |
| 50 - 90 | € 1,429 | € 14,29 |
| 100 - 240 | € 1,166 | € 11,66 |
| 250 - 990 | € 1,145 | € 11,45 |
| 1000 + | € 1,121 | € 11,21 |
*prijsindicatie
- RS-stocknr.:
- 252-3155
- Fabrikantnummer:
- RH6P040BHTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RH6P040BH | |
| Package Type | HSMT-8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Pb Free | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RH6P040BH | ||
Package Type HSMT-8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Pb Free | ||
Automotive Standard AEC-Q101 | ||
The Rohms offers a RH series of a power mosfet with low on resistance and suitable for switching. It is halogen free with 100% Rg and UIS tested with the input volage of 100 V.
Operating junction and storage temperature range is -55℃ to +150℃
Mounted on a cu board
Drain current is 40 A
Power dissipation is 59 W
Gerelateerde Links
- ROHM N-Channel MOSFET 100 V HSMT8 RH6P040BHTB1
- ROHM N-Channel MOSFET 40 V HSMT8 RH6G040BGTB1
- ROHM HT8MB5 N/P-Channel-Channel MOSFET 40 V, 8-Pin HSMT8 HT8MB5TB1
- ROHM RH6G04 N-Channel MOSFET 40 V, 8-Pin HSMT8 RH6G040CHTB1
- ROHM HT8KE6 Dual N-Channel MOSFET 100 V, 8-Pin HSMT8 HT8KE6HTB1
- ROHM HT8K Dual N-Channel MOSFET 100 V, 8-Pin HSMT8 HT8KE6TB1
- ROHM HT8K Dual N-Channel MOSFET 100 V, 8-Pin HSMT8 HT8KE5TB1
- ROHM N-Channel MOSFET 150 V, 8-Pin HSMT8 RH6R025BHTB1
