Infineon HEXFET N-Channel MOSFET, 3.4 A, 20 V PQFN IRLHS6276TRPBF
- RS-stocknr.:
- 257-5826
- Fabrikantnummer:
- IRLHS6276TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 4,84
(excl. BTW)
€ 5,86
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 3.570 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,484 | € 4,84 |
| 100 - 240 | € 0,46 | € 4,60 |
| 250 - 490 | € 0,412 | € 4,12 |
| 500 - 990 | € 0,292 | € 2,92 |
| 1000 + | € 0,238 | € 2,38 |
*prijsindicatie
- RS-stocknr.:
- 257-5826
- Fabrikantnummer:
- IRLHS6276TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Power Dissipation Pd | 9.6W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Power Dissipation Pd 9.6W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 2mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 20 V PQFN
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRLHS6242TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRLHM620TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRFH6200TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V PQFN