Fabrikantnummer

Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

RS-stocknr.:: 257-5871
Fabrikantnummer:: IRFH5215TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 9,20

(excl. BTW)

€ 11,15

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 4.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 1,84	€ 9,20
50 - 120	€ 1,582	€ 7,91
125 - 245	€ 1,492	€ 7,46
250 - 495	€ 1,38	€ 6,90
500 +	€ 1,288	€ 6,44

*prijsindicatie

RS-stocknr.:: 257-5871
Fabrikantnummer:: IRFH5215TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Power Dissipation Pd	104W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6mm
	Height	0.9mm
	Width	5 mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Power Dissipation Pd 104W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6mm
	Height 0.9mm
	Width 5 mm
	Automotive Standard No

Datasheet - IRFH5215TRPBF

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

GRATIS bezorging voor bestellingen van meer dan € 75,00

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