Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V TO-263
- RS-stocknr.:
- 257-9427
- Fabrikantnummer:
- IRFS38N20DTRLP
- Fabrikant:
- Infineon
Subtotaal (1 rol van 800 eenheden)*
€ 1.147,20
(excl. BTW)
€ 1.388,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 1,434 | € 1.147,20 |
*prijsindicatie
- RS-stocknr.:
- 257-9427
- Fabrikantnummer:
- IRFS38N20DTRLP
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Maximum Power Dissipation Pd | 320W | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Maximum Power Dissipation Pd 320W | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel IR mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 200 V D2-Pak IRFS38N20DTRLP
- Infineon HEXFET P-Channel MOSFET, 70 A D2-Pak AUIRF4905STRL
- Infineon HEXFET N-Channel MOSFET 60 V D2-Pak IRFS3206TRRPBF
- Infineon HEXFET N-Channel MOSFET 60 V D2-Pak IRFS7540TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V D2-Pak IRFS3306TRLPBF
- Infineon HEXFET N-Channel MOSFET 200 V D²Pak, TO-262 IRFS4227TRLPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 200 V, 3-Pin TO-220 Full-Pak IRFI4227PBF
- Infineon HEXFET N-Channel MOSFET 40 V D-PAK IRFR7446TRPBF
