Infineon HEXFET N-Channel MOSFET, 7.60 A, 30 V Enhancement PQFN IRLHS6376TRPBF

RS-stocknr.:: 257-9447
Fabrikantnummer:: IRLHS6376TRPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 7.60 A, 30 V Enhancement PQFN IRLHS6376TRPBF

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100 - 240	€ 0,48	€ 4,80
250 - 490	€ 0,43	€ 4,30
500 - 990	€ 0,304	€ 3,04
1000 +	€ 0,269	€ 2,69

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RS-stocknr.:: 257-9447
Fabrikantnummer:: IRLHS6376TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.60A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.8nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	4.9W
	Maximum Gate Source Voltage Vgs	12V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.60A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type PQFN
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.8nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 4.9W
	Maximum Gate Source Voltage Vgs 12V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRLHS6376TRPBF

Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 7.60A Maximum Continuous Drain Current - IRLHS6376TRPBF

This MOSFET is an N-channel enhancement-mode transistor designed for switching and power-management roles in electronic systems. It operates across a wide temperature range from -55°C to 150°C and meets RoHS requirements, making it suitable where regulated material standards are required. The device is supplied in a PQFN package intended for through‑hole mounting.

Features and Benefits:

• 63mΩ RDS(on) minimises conduction losses for improved efficiency
• 30V VDS enables low-voltage power switching applications
• 7.60A continuous drain current supports sustained load delivery
• 2.8 nC typical gate charge allows high-speed switching performance
• 4.9W power dissipation manages thermal load within limits

Applications

• Suitable for low-voltage motor-drive circuitry
• Ideal for power-supply secondary switching stages
• Used for battery-management and DC-DC conversion tasks
• Can be used for telecoms and industrial-control switching
• Appropriate for heat-managed consumer power modules

What gate voltage can be applied without damage?

The maximum gate-to-source rating is 12V.

How does thermal tolerance affect deployment?

The device operates from -55°C to 150°C, enabling use in environments with wide temperature variation.

What is the typical switching characteristic relevant to gate-drive design?

The typical total gate charge is 2.8 nC at rated gate-drive conditions.

What package and mounting method are provided for PCB integration?

It is supplied in a PQFN package configured for through‑hole mounting.

Is this device intended for automotive specification use?

It is not designated as compliant with automotive standards.