Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252
- RS-stocknr.:
- 257-9456
- Fabrikantnummer:
- IRLR3636TRLPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 1.833,00
(excl. BTW)
€ 2.217,00
(incl. BTW)
Voeg 3000 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- Verzending vanaf 15 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,611 | € 1.833,00 |
*prijsindicatie
- RS-stocknr.:
- 257-9456
- Fabrikantnummer:
- IRLR3636TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Maximum Power Dissipation Pd | 143W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Maximum Power Dissipation Pd 143W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
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