Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF

RS-stocknr.:: 830-3372
Fabrikantnummer:: IRLR3636TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin TO-252 IRLR3636TRPBF

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RS-stocknr.:: 830-3372
Fabrikantnummer:: IRLR3636TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	49nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16V
	Maximum Power Dissipation Pd	143W
	Maximum Operating Temperature	175°C
	Width	6.22mm
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 49nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16V
	Maximum Power Dissipation Pd 143W
	Maximum Operating Temperature 175°C
	Width 6.22mm
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 99A Maximum Continuous Drain Current - IRLR3636TRPBF

This n-channel enhancement MOSFET from Infineon is a power transistor designed for high-current switching in surface-mounted circuitry. It operates across a wide temperature span and suits applications requiring robust drain-source voltage handling and substantial continuous current capacity. The device features a TO-252 package for compact board-level mounting and a gate rating that supports typical gate-drive voltages.

Features and Benefits:

• Maximum continuous drain current 99A enables high-current switching
• Maximum drain-source voltage 60V supports mid-voltage systems
• Very low Rds(on) 8.3mΩ reduces conduction losses
• Maximum power dissipation 143W allows sustained high-power operation
• Typical gate charge 49nC permits predictable switching dynamics
• Forward voltage 1.3V minimises voltage drop under load

Applications

• Ideal for motor driver stages in electric actuators
• Suitable for high-current DC-DC converters and regulators
• Used with battery management and power distribution modules
• Can be used for synchronous rectification in power supplies
• Suitable for industrial switching in variable-speed drives

What gate-voltage limits must be observed during design?

The device must not be driven beyond a gate-source rating of 16V to avoid gate oxide stress and ensure reliable switching.

What thermal conditions can it tolerate in operation?

The transistor is specified to function between -55°C and 175°C, allowing use in demanding thermal environments with appropriate thermal management.

How does the package affect board layout and mounting?

The TO-252 surface-mount format provides a compact footprint and thermal path to the PCB, facilitating low-inductance connections and efficient heat transfer.

How does its channel type influence switching behaviour?

Being an N-channel enhancement device means it requires a positive gate drive relative to the source to turn on, offering low Rds(on) when appropriately driven.