Infineon OptiMOS Type N-Channel MOSFET, 257 A, 60 V, 8-Pin TDSON

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Subtotaal (1 rol van 5000 eenheden)*

€ 8.465,00

(excl. BTW)

€ 10.245,00

(incl. BTW)

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  • Verzending vanaf 25 mei 2026
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5000 +€ 1,693€ 8.465,00

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RS-stocknr.:
258-0680
Fabrikantnummer:
BSC014N06NSTATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.45mΩ

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

89nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)

Optimized for synchronous rectification

Longer life time

Highest efficiency and power density

Highest system reliability

Thermal robustness

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