Infineon IPD N-Channel MOSFET, 30 A, 60 V N TO-252 IPD220N06L3GATMA1

RS-stocknr.:: 258-3836
Fabrikantnummer:: IPD220N06L3GATMA1
Fabrikant:: Infineon

Infineon IPD N-Channel MOSFET, 30 A, 60 V N TO-252 IPD220N06L3GATMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 rol van 2500 eenheden)*

€ 540,00

(excl. BTW)

€ 652,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 10 mei 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2500 - 2500	€ 0,216	€ 540,00
5000 +	€ 0,205	€ 512,50

*prijsindicatie

RS-stocknr.:: 258-3836
Fabrikantnummer:: IPD220N06L3GATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	39.80mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Maximum Drain Source Resistance Rds 39.80mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPD220N06L3GATMA1

Infineon IPD Series MOSFET, 60V Maximum Drain-Source Voltage, 30A Maximum Continuous Drain Current - IPD220N06L3GATMA1

This MOSFET is a surface‑mount N‑channel transistor designed for power switching in demanding thermal environments. It combines a moderate voltage rating with substantial continuous current capability, making it suitable for applications that need efficient conduction and Compact mounting. The device complies with RoHS standards and is offered in a TO‑252 package for straightforward PCB assembly.

Features and Benefits:

• 39.8mΩ RDS(on) delivering reduced conduction losses
• 1.2V forward voltage enabling efficient gate‑driven switching
• -55°C to +175°C operating range supporting wide temperature extremes
• 60V drain-source rating allowing robust voltage headroom
• 30A continuous drain current supporting high‑current loads

Applications

• Suitable for DC power distribution modules
• Ideal for motor driver switching stages
• Used with battery management circuits requiring surface mounting
• Can be used for synchronous rectification in converters
• Suitable for high‑current load switching on Compact PCBs

What package type is provided for PCB assembly?

The device is supplied in a TO‑252 surface‑mount package suited to reflow processes.

Which channel polarity does it employ for control circuits?

It uses an N‑channel configuration for low‑side or high‑side switching topologies depending on circuit design.

Is it intended for automotive qualification?

It is not designated as an automotive‑standard device but meets RoHS environmental requirements.

What mounting style is appropriate for this component?

The transistor is intended for surface mounting to permit low‑profile board layouts.

What is the maximum operating temperature specified?

The component is rated to operate up to +175°C.