Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1
- RS-stocknr.:
- 258-3849
- Fabrikantnummer:
- IPD60N10S412ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 3,91
(excl. BTW)
€ 4,732
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,955 | € 3,91 |
| 20 - 48 | € 1,705 | € 3,41 |
| 50 - 98 | € 1,60 | € 3,20 |
| 100 - 198 | € 1,495 | € 2,99 |
| 200 + | € 1,38 | € 2,76 |
*prijsindicatie
- RS-stocknr.:
- 258-3849
- Fabrikantnummer:
- IPD60N10S412ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
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