Infineon HEXFET Type N-Channel MOSFET, 46 A, 100 V, 8-Pin PQFN IRFH5053TRPBF
- RS-stocknr.:
- 258-3970
- Fabrikantnummer:
- IRFH5053TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,67
(excl. BTW)
€ 4,44
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 5.468 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,835 | € 3,67 |
| 20 - 48 | € 1,60 | € 3,20 |
| 50 - 98 | € 1,49 | € 2,98 |
| 100 - 198 | € 1,39 | € 2,78 |
| 200 + | € 1,285 | € 2,57 |
*prijsindicatie
- RS-stocknr.:
- 258-3970
- Fabrikantnummer:
- IRFH5053TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount package
industry standard qualification level
Standard pinout allows for drop-in replacement
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V PQFN IRFHM3911TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V PQFN IRLH5030TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN