Infineon HEXFET MOSFET, 8.7 A, 150 V, 5-Pin TO-220 IRFI4019H-117PXKMA1

Bekijk alle MOSFETs
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
Verpakkingsopties
RS-stocknr.:
258-3974
Fabrikantnummer:
IRFI4019H-117PXKMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-220

Series

HEXFET

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

80mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

13nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Low RDS(on)

Dual N-Channel MOSFET

Integrated Half Bridge package

Low Qrr

Environmentally friendly

High power density

Integrated design

Board savings

Low EMI

Gerelateerde Links