Infineon SPD15P10P Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TSDSON SPD15P10PGBTMA1
- RS-stocknr.:
- 258-7787
- Fabrikantnummer:
- SPD15P10PGBTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,42
(excl. BTW)
€ 11,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2.490 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,884 | € 9,42 |
| 50 - 120 | € 1,678 | € 8,39 |
| 125 - 245 | € 1,582 | € 7,91 |
| 250 - 495 | € 1,468 | € 7,34 |
| 500 + | € 0,754 | € 3,77 |
*prijsindicatie
- RS-stocknr.:
- 258-7787
- Fabrikantnummer:
- SPD15P10PGBTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.24Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.24Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SIPMOS power transistor belongs highly innovative OptiMOS family P channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb free lead plating
RoHS compliant
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