Infineon SPD15P10P Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-252 SPD15P10PLGBTMA1
- RS-stocknr.:
- 258-7790
- Fabrikantnummer:
- SPD15P10PLGBTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 11,34
(excl. BTW)
€ 13,72
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 2.350 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,268 | € 11,34 |
| 25 - 45 | € 1,954 | € 9,77 |
| 50 - 120 | € 1,838 | € 9,19 |
| 125 - 245 | € 1,702 | € 8,51 |
| 250 + | € 1,248 | € 6,24 |
*prijsindicatie
- RS-stocknr.:
- 258-7790
- Fabrikantnummer:
- SPD15P10PLGBTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.20Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | -0.96V | |
| Maximum Power Dissipation Pd | 230W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.20Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf -0.96V | ||
Maximum Power Dissipation Pd 230W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The Infineon SIPMOS power transistor belongs to highly innovative OptiMOS family P channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb free lead plating
RoHS compliant
Gerelateerde Links
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 SPD04P10PGBTMA1
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON SPD15P10PGBTMA1
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1