Infineon BSC Type N-Channel MOSFET, 100 A, 75 V N, 8-Pin TDSON BSC036NE7NS3GATMA1
- RS-stocknr.:
- 259-1471
- Fabrikantnummer:
- BSC036NE7NS3GATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,06
(excl. BTW)
€ 2,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.600 stuk(s) vanaf 12 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,03 | € 2,06 |
| 20 - 48 | € 0,92 | € 1,84 |
| 50 - 98 | € 0,865 | € 1,73 |
| 100 - 198 | € 0,805 | € 1,61 |
| 200 + | € 0,515 | € 1,03 |
*prijsindicatie
- RS-stocknr.:
- 259-1471
- Fabrikantnummer:
- BSC036NE7NS3GATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | BSC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 63.4nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.35mm | |
| Height | 5.35mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series BSC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 63.4nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.35mm | ||
Height 5.35mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon 75V optimos technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.
Optimized technology for synchronous rectification
Best switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
RoHS compliant halogen free
MSL3 rated
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