Infineon IPT Type N-Channel MOSFET, 236 A, 100 V HSOF

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Subtotaal (1 rol van 1800 eenheden)*

€ 4.559,40

(excl. BTW)

€ 5.517,00

(incl. BTW)

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  • Verzending vanaf 30 maart 2026
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Aantal stuks
Per stuk
Per rol*
1800 +€ 2,533€ 4.559,40

*prijsindicatie

RS-stocknr.:
259-2653
Fabrikantnummer:
IPT022N10NF2SATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

236A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOF

Series

IPT

Mount Type

Surface

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

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