Infineon IPT N-Channel MOSFET, 247 A, 80 V HSOF IPT019N08N5ATMA1
- RS-stocknr.:
- 258-3902
- Fabrikantnummer:
- IPT019N08N5ATMA1
- Fabrikant:
- Infineon
Subtotaal (2000 eenheden, op een rol van 2000)*
€ 3.752,00
(excl. BTW)
€ 4.540,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 1,876 | € 3.752,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3902
- Fabrikantnummer:
- IPT019N08N5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 247A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF | |
| Series | IPT | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 247A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF | ||
Series IPT | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V n-channel power MOSFET in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles, POL and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-leadless is the perfect solution where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
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