Infineon IPP Type N-Channel MOSFET, 197 A, 40 V Enhancement, 3-Pin TO-220 IPP013N04NF2SAKMA1
- RS-stocknr.:
- 260-1056
- Fabrikantnummer:
- IPP013N04NF2SAKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,92
(excl. BTW)
€ 4,74
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 744 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,96 | € 3,92 |
| 20 - 48 | € 1,765 | € 3,53 |
| 50 - 98 | € 1,65 | € 3,30 |
| 100 - 198 | € 1,535 | € 3,07 |
| 200 + | € 1,41 | € 2,82 |
*prijsindicatie
- RS-stocknr.:
- 260-1056
- Fabrikantnummer:
- IPP013N04NF2SAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 197A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 197A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series IPP | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET provides an addressing a broad range of applications from low to high switching frequency having a broad availability from distribution partners to excellent price and performance ratio.
High current rating
Industry standard footprint through hole package
Gerelateerde Links
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IPP011N04NF2SAKMA1
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IPP033N04NF2SAKMA1
- Infineon IPP Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IPP015N04NF2SAKMA1