Infineon IPP Type N-Channel MOSFET, 193 A, 40 V Enhancement, 3-Pin TO-220 IPP015N04NF2SAKMA1
- RS-stocknr.:
- 260-1058
- Fabrikantnummer:
- IPP015N04NF2SAKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,37
(excl. BTW)
€ 5,288
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 952 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,185 | € 4,37 |
| 20 - 48 | € 1,96 | € 3,92 |
| 50 - 98 | € 1,83 | € 3,66 |
| 100 - 198 | € 1,705 | € 3,41 |
| 200 + | € 1,595 | € 3,19 |
*prijsindicatie
- RS-stocknr.:
- 260-1058
- Fabrikantnummer:
- IPP015N04NF2SAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 193A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.86V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.75mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 15.8mm | |
| Width | 10.67 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 193A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPP | ||
Package Type TO-220 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.86V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.75mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 15.8mm | ||
Width 10.67 mm | ||
Automotive Standard No | ||
The Infineon MOSFET provides an addressing a broad range of applications from low to high switching frequency having a broad availability from distribution partners to excellent price and performance ratio.
Ideal for high and low switching frequency
Industry standard footprint through hole package
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