Infineon HEXFET Type P-Channel MOSFET, -42 A, -55 V TO-263
- RS-stocknr.:
- 260-5058
- Fabrikantnummer:
- AUIRF4905STRL
- Fabrikant:
- Infineon
Subtotaal (1 rol van 800 eenheden)*
€ 2.424,00
(excl. BTW)
€ 2.936,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 800 + | € 3,03 | € 2.424,00 |
*prijsindicatie
- RS-stocknr.:
- 260-5058
- Fabrikantnummer:
- AUIRF4905STRL
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -42A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.88mm | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -42A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 15.88mm | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon P Channel HEXFET Power MOSFET is specifically design for automotive applications. This power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
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