STMicroelectronics Type N-Channel MOSFET, 10 A, 800 V Enhancement, 7-Pin Tape & Reel SCT040HU65G3AG
- RS-stocknr.:
- 261-5040
- Fabrikantnummer:
- SCT040HU65G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 12,31
(excl. BTW)
€ 14,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 207 stuk(s) vanaf 31 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,31 |
| 10 - 99 | € 11,69 |
| 100 - 249 | € 11,11 |
| 250 - 499 | € 10,55 |
| 500 + | € 10,02 |
*prijsindicatie
- RS-stocknr.:
- 261-5040
- Fabrikantnummer:
- SCT040HU65G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39.5nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 14 mm | |
| Length | 18.58mm | |
| Height | 3.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39.5nC | ||
Maximum Operating Temperature 150°C | ||
Width 14 mm | ||
Length 18.58mm | ||
Height 3.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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