STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- RS-stocknr.:
- 275-1355
- Fabrikantnummer:
- STP80N600K6
- Fabrikant:
- STMicroelectronics
Subtotaal (1 tube van 50 eenheden)*
€ 68,40
(excl. BTW)
€ 82,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 50 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 1,368 | € 68,40 |
*prijsindicatie
- RS-stocknr.:
- 275-1355
- Fabrikantnummer:
- STP80N600K6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 86W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 86W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Length 28.9mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Zener protected
Gerelateerde Links
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N900K6
- STMicroelectronics STP Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP80N340K6
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP80N240K6
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP65N045M9
- STMicroelectronics STP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 STP60N043DM9
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220