STMicroelectronics Type N-Channel MOSFET, 7 A, 1200 V Enhancement, 3-Pin Tape & Reel
- RS-stocknr.:
- 261-5047P
- Fabrikantnummer:
- STH12N120K5-2AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 104,90
(excl. BTW)
€ 126,90
(incl. BTW)
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- Plus verzending 566 stuk(s) vanaf 26 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 10,49 |
| 100 - 249 | € 9,96 |
| 250 - 499 | € 9,46 |
| 500 + | € 8,99 |
*prijsindicatie
- RS-stocknr.:
- 261-5047P
- Fabrikantnummer:
- STH12N120K5-2AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.8mm | |
| Width | 10.4 mm | |
| Standards/Approvals | No | |
| Height | 4.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.8mm | ||
Width 10.4 mm | ||
Standards/Approvals No | ||
Height 4.7mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
AEC-Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested