STMicroelectronics MDmesh K6 Type N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220
- RS-stocknr.:
- 261-5484
- Fabrikantnummer:
- STP80N450K6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 114,00
(excl. BTW)
€ 138,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 juli 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 200 | € 2,28 | € 114,00 |
| 250 - 450 | € 2,223 | € 111,15 |
| 500 + | € 2,161 | € 108,05 |
*prijsindicatie
- RS-stocknr.:
- 261-5484
- Fabrikantnummer:
- STP80N450K6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | MDmesh K6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.6Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series MDmesh K6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.6Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener protected
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