Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 262-6739
- Fabrikantnummer:
- IRF7503TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 4000 eenheden)*
€ 876,00
(excl. BTW)
€ 1.060,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 - 4000 | € 0,219 | € 876,00 |
| 8000 + | € 0,208 | € 832,00 |
*prijsindicatie
- RS-stocknr.:
- 262-6739
- Fabrikantnummer:
- IRF7503TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 222mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOIC | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 222mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.
Ultra low resistance
Available in tape and reel
Very small SOIC package
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