Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC

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RS-stocknr.:
262-6739
Fabrikantnummer:
IRF7503TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Pin Count

8

Maximum Drain Source Resistance Rds

222mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.25W

Typical Gate Charge Qg @ Vgs

7.8nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.

Ultra low resistance

Available in tape and reel

Very small SOIC package

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