ROHM RE1E002SP Type P-Channel MOSFET, -0.25 A, 30 V Enhancement, 3-Pin SOT-416 RE1E002SPTCL
- RS-stocknr.:
- 264-3820
- Fabrikantnummer:
- RE1E002SPTCL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 3,775
(excl. BTW)
€ 4,575
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2.950 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,151 | € 3,78 |
| 50 - 75 | € 0,148 | € 3,70 |
| 100 - 225 | € 0,093 | € 2,33 |
| 250 - 975 | € 0,092 | € 2,30 |
| 1000 + | € 0,089 | € 2,23 |
*prijsindicatie
- RS-stocknr.:
- 264-3820
- Fabrikantnummer:
- RE1E002SPTCL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -0.25A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-416 | |
| Series | RE1E002SP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150mW | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -0.25A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-416 | ||
Series RE1E002SP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150mW | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- TH
The ROHM MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
4 V-drive type
Pch small-signal MOSFET
Small surface mount package
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