Microchip TP0620 Type P-Channel MOSFET, -175 A, 200 V Enhancement, 3-Pin TO-92 TP0620N3-G
- RS-stocknr.:
- 264-8927
- Fabrikantnummer:
- TP0620N3-G
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,34
(excl. BTW)
€ 10,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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| 5 - 45 | € 1,668 | € 8,34 |
| 50 - 95 | € 1,376 | € 6,88 |
| 100 - 245 | € 1,276 | € 6,38 |
| 250 - 495 | € 1,25 | € 6,25 |
| 500 + | € 1,224 | € 6,12 |
*prijsindicatie
- RS-stocknr.:
- 264-8927
- Fabrikantnummer:
- TP0620N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -175A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TP0620 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -175A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TP0620 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (85pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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