Microchip LP0701 Type P-Channel MOSFET, 16.5 V Enhancement, 3-Pin TO-92 LP0701N3-G
- RS-stocknr.:
- 333-080
- Fabrikantnummer:
- LP0701N3-G
- Fabrikant:
- Microchip
Subtotaal (1 zak van 1000 eenheden)*
€ 1.253,00
(excl. BTW)
€ 1.516,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Nieuw product (vandaag reserveren)
- Verzending vanaf 02 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 1000 + | € 1,253 | € 1.253,00 |
*prijsindicatie
- RS-stocknr.:
- 333-080
- Fabrikantnummer:
- LP0701N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 16.5V | |
| Package Type | TO-92 | |
| Series | LP0701 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 16.5V | ||
Package Type TO-92 | ||
Series LP0701 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a Enhancement mode transistor uses a lateral MOS structure and a well proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
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