ROHM R6055VNZ Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-3PF R6055VNZC17
- RS-stocknr.:
- 265-5423
- Fabrikantnummer:
- R6055VNZC17
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 10,38
(excl. BTW)
€ 12,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,38 |
| 10 - 24 | € 9,38 |
| 25 - 49 | € 9,20 |
| 50 - 99 | € 9,02 |
| 100 + | € 8,82 |
*prijsindicatie
- RS-stocknr.:
- 265-5423
- Fabrikantnummer:
- R6055VNZC17
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-3PF | |
| Series | R6055VNZ | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.071Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 99W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free Plating, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-3PF | ||
Series R6055VNZ | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.071Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 99W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free Plating, RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
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