Vishay SQ Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 6-Pin TSOP-6 SQ3456CEV-T1_GE3
- RS-stocknr.:
- 268-8353
- Fabrikantnummer:
- SQ3456CEV-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 11,35
(excl. BTW)
€ 13,725
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.025 stuk(s) vanaf 01 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,454 | € 11,35 |
| 50 - 75 | € 0,445 | € 11,13 |
| 100 - 225 | € 0,338 | € 8,45 |
| 250 - 975 | € 0,332 | € 8,30 |
| 1000 + | € 0,213 | € 5,33 |
*prijsindicatie
- RS-stocknr.:
- 268-8353
- Fabrikantnummer:
- SQ3456CEV-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP-6 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 4W | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.05mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP-6 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 4W | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.05mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and surface mount type device. It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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