Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- RS-stocknr.:
- 787-9468
- Fabrikantnummer:
- SQ3460EV-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,94
(excl. BTW)
€ 9,61
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,794 | € 7,94 |
| 100 - 240 | € 0,746 | € 7,46 |
| 250 - 490 | € 0,676 | € 6,76 |
| 500 - 990 | € 0,636 | € 6,36 |
| 1000 + | € 0,596 | € 5,96 |
*prijsindicatie
- RS-stocknr.:
- 787-9468
- Fabrikantnummer:
- SQ3460EV-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SQ Rugged | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.77V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.7 mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SQ Rugged | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 3.6W | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.77V | ||
Maximum Operating Temperature 175°C | ||
Width 1.7 mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
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