Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1
- RS-stocknr.:
- 273-2788
- Fabrikantnummer:
- IPDD60R050G7XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,62
(excl. BTW)
€ 9,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 100 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 49 | € 7,62 |
| 50 - 99 | € 6,93 |
| 100 - 249 | € 6,34 |
| 250 - 499 | € 5,85 |
| 500 + | € 5,45 |
*prijsindicatie
- RS-stocknr.:
- 273-2788
- Fabrikantnummer:
- IPDD60R050G7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-10-1 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-10-1 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is easy to use and has the highest quality standards. It is possibility to increase economies of scales by usage in PFC and PWM topologies in the application. It reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.
Total Pb free
RoHS compliant
Easy visual inspection leads
Improve thermal performance
Suitable for hard and soft switching
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10-1 IPDD60R050G7XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R180CM8XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R037CM8XTMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1
- Infineon OptiMOS Type N-Channel MOSFET 120 V Enhancement, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 16-Pin PG-HDSOP-16 IPTC007N06NM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1
- Infineon OptiMOS Type N-Channel MOSFET 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1