Infineon IPL Type N-Channel MOSFET, 21 A, 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R099C7AUMA1
- RS-stocknr.:
- 273-2789
- Fabrikantnummer:
- IPL65R099C7AUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 8.673,00
(excl. BTW)
€ 10.494,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 2,891 | € 8.673,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2789
- Fabrikantnummer:
- IPL65R099C7AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PG-VSON-4 | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 128W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PG-VSON-4 | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 128W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
The Infineon MOSFET is a 650V CoolMOS C7 series power transistor. CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Pb free plating
RoHS compliant
Lower switching losses
Increase power density
Enabling higher frequency
Halogen free mould compound
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